
Suzhou - October 29, 2026
Suzhou International Expo Centre 苏州国际博览中心
Hall G202 - No. 688, Suzhou Avenue East,
Suzhou Industrial Park, Suzhou, Jiangsu Province, China
Workshop registration includes all technical sessions, the TestConX EXPO, buffet lunch,
morning & afternoon tea breaks, and download of the Proceedings.
TestConX, over the course of its twenty-seven-year history, has established itself as the preeminent event for test consumables, test cell integration, and test operations. The program scope includes packaged semiconductor “final” test, burn-in, system level test, and beyond to encompass all practical aspects of electronics testing such as validation, advanced packaging testing, module test, and finished product test.
Join us in-person for the 12th annual TextConX China! You will not want to miss this opportunity to be part of TestConX as we connect a larger community of test professionals and to participate in this excellent event!
Thursday October 29, 2026
8:45
10:30
Break & Networking
Enjoy time to meet with the presenters and network while refreshments are served.11:00
“你并不孤单:探针烧毁的痛点与博弈”
Abstract - Biography (English)
Abstract:
This study aims to analyze and investigate the causes of probe burn during wafer testing of high-current, high-power devices. We employ an integrated approach combining:
- Monte Carlo simulations of random resistor network distributions,
- Multiphysics finite element simulations coupling joule heating with thermal diffusion to model temperature rise,
- AI-driven fitting/optimization using TensorFlow with CUDA acceleration, to predict the temperature rise according to different pin count group and individual probe current distribution.
- Molecular dynamics (MD) simulations to characterize tensile strength properties under different temperature.
By synthesizing insights from these methodologies, we explore the underlying mechanisms of probe burn formation. Our analysis specifically examines whether the identified thermo-electro-mechanical phenomena represent the primary cause or constitute one contributing factor among others……
YJ Shi is a senior expert in semiconductor testing and precision metallic interconnect technologies, with more than two decades of experience in SoC testing, spring probes (Pogo Pins), and MEMS probe and probe card research and development.
He began his career at AMD as a packaging process engineer and SoC test development engineer, and subsequently served as Probe Assembly Manager at Antares, Probe Card R&D Manager at Microprobe Technology, Probe Card R&D Manager for FormFactor China, R&D Director at Twinsolution, and General Manager of Nanofab Semiconductor Technology.
His expertise centers on the development of highly reliable, high-frequency, and miniaturized metallic interconnect structures. His core capabilities include Pogo Pin and MEMS probe structural design, materials engineering, mems process budgeting, micro-assembly, reliability and electrical performance validation, and production ramp-up.
He has comprehensive experience spanning technology roadmap planning, product definition, R&D organization building, mems process development, customer qualification, and production stabilize, with a particular strength in translating advanced probe technologies into robust, scalable, and manufacturable solutions.
摘要 - 简介 (Chinese)
摘要:
本研究旨在分析和探究高电流、高功率器件在晶圆测试过程中发生探针烧毁的原因。我们采用综合性研究方法,结合以下几种分析与仿真手段:
- 基于随机电阻网络分布的蒙特卡洛(Monte Carlo)模拟;
- 多物理场有限元仿真,将焦耳热与热扩散过程进行耦合,以模拟温升变化;
- 基于人工智能的拟合与优化方法,利用 TensorFlow 和 CUDA 加速,根据不同探针数量分组及单个探针的电流分布,预测探针温升;
- 分子动力学(Molecular Dynamics,MD)仿真,用于表征不同温度条件下材料的抗拉强度特性。
通过综合分析上述方法获得的结果和分析,本研究进一步探讨探针烧毁形成的内在机制。我们重点分析所识别出的热-电-力耦合现象判断其究竟是导致探针烧毁的主要原因,还是众多影响因素中的一个……
施元军是集成电路测试与精密金属互联领域资深专家,拥有二十余年 SoC 测试、弹簧探针(Pogo Pin)及 MEMS 探针/探针卡研发与产业化经验。
职业生涯始于 AMD,历任封装工艺工程师和 SoC 测试开发工程师;随后先后担任安托锐探针组装经理、美博科技探针卡研发经理、FormFactor 中国区探针卡研发经理、韬盛研发总监及晶晟微纳半导体科技公司总经理。
其长期专注于高可靠、高频及微型化金属互联结构研发,核心专长涵盖 Pogo Pin 与 MEMS 探针的结构设计、材料体系、精密制造、微细组装、可靠性与电气性能验证,以及量产导入。
施元军具备从技术路线规划、产品定义和研发组织建设,到工艺开发、客户验证的完整经验,尤其擅长将探针及探针卡技术转化为稳定、可量产的产品解决方案。
“GPAC130: 一种应用于芯片测试探针的高性价比钯合金材料”
Abstract - Biography (English)
As semiconductor devices continue to evolve toward greater complexity, higher integration, and smaller geometries, palladium alloy materials are increasingly adopted in semiconductor test probes due to their favorable mechanical and electrical properties. However, conventional palladium alloys commonly used in the market typically exhibit a hardness of approximately 460 HV after heat treatment and an electrical resistivity of 13–14 μΩ·cm. These limitations result in relatively poor wear resistance, shorter service life, and higher electrical resistance, making them less suitable for advanced semiconductor testing applications that require high probe density, long testing cycles, and enhanced reliability. In addition, many high-performance palladium alloys rely on elevated proportions of precious metals to achieve superior properties, leading to significantly increased manufacturing costs. This challenge becomes particularly pronounced in complex semiconductor test modules containing a large number of high-density probes, where balancing performance and cost-effectiveness remains difficult.
To address these industry challenges, the GOLDLINK R&D Center initiated a dedicated development program and successfully developed GPAC130, a novel high-performance palladium alloy specifically designed for semiconductor test probe applications. By maintaining the palladium content at 40 wt.% while optimizing the alloy composition and refining the manufacturing process, GPAC130 achieves a significant enhancement in overall electromechanical performance.
The alloy exhibits a hardness of 510–540 HV and an electrical resistivity of 10.5–11.5 μΩ·cm, while retaining excellent machinability suitable for the fabrication of precision spring probes. Compared with conventional high-performance palladium alloys, GPAC130 achieves significantly improved hardness and reduced electrical resistivity while maintaining the same palladium content.
The alloy offers a favorable balance between performance and cost, making it a promising material for advanced semiconductor test probe applications. Its combination of high hardness, low resistivity, and good machinability can effectively support the increasing demands of modern semiconductor testing, including high reliability, extended test duration, and high-density probe configurations.
Daying Cao
As the Chief Data Scientist of the R&D Center at Zhejiang Goldlink Tech Co.,Ltd, he brings more than ten years of experience in artificial intelligence and big data. His research and engineering expertise focuses on data analytics, machine learning, and large language models (LLMs) application across finance, technology, and advanced manufacturing.
He has led multiple AI-driven innovation projects within the company, applying interdisciplinary knowledge to enhance intelligent manufacturing and accelerate product development. He received his M.A. in Statistics from Columbia University and holds dual bachelor’s degrees in Applied Mathematics and Computer Science.
摘要 - 简介 (Chinese)
随着半导体芯片不断向复杂化、小型化发展,钯合金材料凭借其优异的机械性能和电气性能,正越来越广泛地应用于半导体测试探针制造。然而,目前市场上常用的钯合金材料硬度通常约为460 HV,电阻率为13–14 μΩ·cm,存在耐磨性相对较差、使用寿命较短以及电阻率较高等不足,因此难以满足先进半导体测试对高密度、长测试周期及高可靠性的需求。此外,为获得更优异的性能,许多高性能钯合金普遍采用较高比例的贵金属配比,导致制造成本显著增加。特别是在包含高密度探针的复杂半导体测试模块中,如何兼顾材料性能与成本效益已成为行业面临的问题。
针对上述行业痛点,GOLDLINK研发中心开展专项技术研发,成功开发出一款专用于半导体测试探针的新型高性能钯合金材料GPAC130。该材料在保持钯含量40 wt.%不变的基础上,通过优化合金成分设计和改进生产制造工艺,实现了机械性能与电气性能的提升。
GPAC130具有510–540 HV的硬度和10.5–11.5 μΩ·cm的电阻率,同时保持了优异的切削加工性能,可满足精密弹簧探针的制造加工需求。与传统高性能钯合金相比,GPAC130在保持相同钯含量的前提下,实现了更高的硬度和更低的电阻率,在材料性能与成本之间取得了良好的平衡,为先进半导体测试探针提供了一种具有应用前景的新型材料解决方案。
曹大瀛
现任浙江金连接科技股份有限公司研发中心首席数据科学家,深耕人工智能与大数据领域十余年,聚焦数据分析,机器学习算法、大模型应用落地,覆盖金融、互联网、高端制造等多行业;牵头推动公司多项AI相关技术项目落地,依托交叉学科优势,以数据智能赋能公司生产与产品研发。
哥伦比亚大学统计学硕士,拥有应用数学、计算机科学本科学位。
“高功率老化测试插座(Vulcan)”
Abstract - Biography (English)
With the development of AI and automated driving technology, semiconductor chips are evolving toward higher power, larger package sizes, and higher pin counts. Traditional burn-in socket designs cannot handle the high temperatures and insertion forces required for these demanding applications. Typically, tooled injection-molded burn-in sockets and simple clamshell lids are used; however, conventional mold materials and standard lid actuation mechanisms cannot support the power and force needed to properly compress the spring probes or withstand the rigorous burn-in and stress-testing process.
In this paper, we present a solution that addresses these thermal and large-device challenges by introducing our new purpose-built, high-power burn-in socket solution, Vulcan. The new Vulcan product line leverages our H-Pin probe technology, high-performance socket materials, and our patent-pending Shuttle Bar Lid Force Delivery System to overcome the force, thermal, and power barriers associated with next-generation semiconductor devices.
This paper describes the new socket concept in detail and presents simulation results, validation testing, and real-world performance data demonstrating that the Vulcan platform provides superior electrical, mechanical, and thermal performance to maximize device reliability and yield.
Joe Huang
Joe Huang is a Mechanical Engineer at Smiths Interconnect, a Molex company. He graduated from Yangzhou University in 2019 with a degree in Mechanical Design, Manufacturing and Automation. He joined Smiths Interconnect, a Molex company, in 2022 and currently works as a Mechanical Engineer and Thermal Design Engineer responsible for semiconductor test product design.
摘要 - 简介 (Chinese)
随着人工智能和自动驾驶技术的发展,芯片正朝着更高功率、更大尺寸和更高引脚数的方向演进,传统的老化测试插座设计已无法应对这些极端工况所需的高温和高作用力。通常,此类应用会使用模具注塑成型的老化测试插座和简单的翻盖式测试压盖。然而,传统的模具材料和标准的测试盖驱动机构无法支持测试所需的高功率,难以克服测试插座的压紧力以将弹簧探针压缩到特定行程,也难以承受严苛的应力测试阶段。
在本文中,我们将通过介绍我们全新推出的、专为高功率项目而设计的老化测试插座解决方案“Vulcan”,来阐述如何应对散热和大尺寸芯片带来的挑战。我们全新的 Vulcan 产品线利用了我们专有的 H 探针技术和高性能测试插座材料,以及我们正在申请的新专利“滑梭杆测试压盖力传导系统”,从而克服了压紧力、散热和功率方面的障碍。本文将详细描述我们的新概念,并展示仿真、验证和实际数据,以证明该产品能够提供卓越的电气、机械和热性能,从而实现最高测试良率。
黄文杰
黄文杰
机械工程师,Smiths Interconnect a Molex company
黄文杰,2019年毕业于扬州大学,所学专业是机械设计制造及自动化。自2022年起,黄文杰就职于史密斯英特康莫仕公司,目前任职机械工程师与热设计工程师,负责半导体测试产品设计。
12:30
Lunch and EXPO
Enjoy the delicious hot buffet lunch and networking time. Then take the time to explore the TestConX EXPO. There will be many great exhibits to connect electronic test professionals to solutions. You will be certain to see something new or meet someone new. As attendees to TestConX know, there is always excellent food, drinks, and time for attendees to network with exhibitors! TestConX EXPO will open at 12:30 and will remain open throughout the afternoon until 18:0013:30
“超越导热率:真正影响压缩型金属热界面材料性能的关键因素”
Abstract (English)
As AI, HPC, and power electronics continue to push thermal design limits, thermal interface materials (TIMs) are increasingly required to accommodate surface non-coplanarity while maintaining low thermal resistance under limited assembly pressure. Compressible metal TIMs offer a unique combination of high thermal conductivity and mechanical compliance, making them attractive for next-generation cooling applications.
This study investigates the effects of installation time, applied pressure, material thickness, and pattern geometry on the thermal performance of compressible indium-based metal TIMs. Thermal resistance measurements were conducted using ASTM D5470 methodology at elevated temperature under pressures ranging from 20–50 psi. Multiple TIM thicknesses and surface patterns were evaluated over a 72-hour test duration to characterize the evolution of bond line thickness and effective thermal resistance.
Results show that installation time and applied pressure have the most significant impact on thermal performance due to continued plastic deformation and reduction of interfacial resistance. While TIM thickness influences bulk thermal resistance, its overall effect is moderated by the high thermal conductivity of indium. Pattern geometry plays a critical role during initial installation by concentrating local pressure and improving surface conformity, particularly in applications with non-coplanar mating surfaces.
The findings provide practical design guidelines for selecting compressible metal TIM configurations and assembly conditions to optimize thermal performance and long-term reliability in AI accelerators, data center hardware, and power electronic systems.
摘要 (Chinese)
随着人工智能(AI)、高性能计算(HPC)及功率电子技术持续推动,系统功率密度不断提升,散热设计面临越来越严苛的挑战。热界面材料(Thermal Interface Materials, TIM)除了能适应界面的非共面(Non-Coplanarity)特性,还需要在有限的装配压力下维持低热阻,保证稳定且高效的导热性能。可压缩金属 TIM 兼具高导热率与优异的机械适配性,已成为下一代高效散热解决方案的重要发展方向。
本研究探讨了安装时间、施加压力、材料厚度及图案结构(Pattern Geometry)对可压缩金属铟基 TIM 导热性能的影响。热阻测试采用 ASTM D5470 标准方法,在高温条件且在 20–50 psi 压力范围内进行评估。研究涵盖多种 TIM 厚度及图案设计,持续测试 72 小时,以表征结合层厚度(Bond Line Thickness, BLT)和有效热阻随时间的变化规律。
研究结果表明,安装时间与施加压力对热性能影响最为显著。这主要归因于材料持续发生塑性变形(Plastic Deformation),使界面接触更加充分,从而降低界面热阻。虽然 TIM 材料厚度会影响其自身热阻,但由于铟具有极高的导热率,其整体影响相对有限。图案设计则在初始装配阶段发挥关键作用,可提高局部接触压力并增强表面贴合能力,特别适用于非共面的应用场景。
本研究结果为可压缩型金属 TIM 的材料和图案选型,以及装配方式选择提供了非常实用的设计指南,以此来提升 AI 加速器、数据中心硬件及功率电子系统中的散热性能与长期可靠性。
“基于 SMT8 协议解析与本地 AI 分析的 ATE 寄存器配置自动验证与优化方法”
Abstract (English)
Topic: AI-assisted_Protocol_Analysis_Solution
With the increasing design complexity of advanced integrated circuits, chip testing has become quite complex. More than 90% of test items require the specified protocol set to enter a predefined operating mode before measurement execution. This process is achieved by configuring registers through a chip protocol such as I2C, JTAG, or SPI. In complex test scenarios, a single ATE test program may include tons of register initialization and dynamic configuration operations. In addition, register configuration processes and subsequent measurement operations often interleave, and the accuracy of test results depends on the precise timing window after the target register state configuration is completed.
There are several challenges listed below that will be experienced:
- Verification of register configuration mostly depends on manual inspection during program development and debugging.
- Engineers must pick out the specified cycle ranges which need to insert measurement actions from amounts of configuration cycles in register configuration sequences.
- Modification and validation of register configurations typically depend on a lot of manual work like parsing and trial-and-error debugging.
To resolve these problems, this paper released an AI-assisted SMT8 protocol-based pattern parsing and optimization method. Chapter 1 provides a detailed overview of the background and current state of ATE test, and Chapter 2 describes the core functions of the method. The method performs protocol-level decoding of DFT raw test vectors to automatically extract register address mappings, configuration data, and execution cycle information. Furthermore, a local AI-driven data analysis module is introduced to analyze and interpret the test plan contents and automatically compare parsed register configuration behavior with the test plan specifications.
This framework focuses on the following key technical challenges:
- Abstraction of waveform information in raw test vectors.
- versatile protocol Compatibility.
- Accurate localization of cycle ranges for register configuration segments.
- Local AI model preset tuning and verification skill definition.
The method consists of waveform reconstruction, protocol action serialization, protocol rule matching, test data processing, and AI analysis.
Experimental results demonstrate that the method significantly improves register configuration readability and debugging efficiency in ATE-based chip testing workflows. Compared with conventional manual analysis approaches:
- The time spent on register configuration consistency verification is reduced from 18 hours per project to 2 hours per project (almost 88% save).
- The time spent on register configuration modification during debugging is reduced from 10 hours per project to 4 hours per project (reduce 60% time cost).
- The overall test program development and debugging cycle is reduced by approximately 30% on average.
- The program error rate is reduced by 70%.
By combining automatic protocol-level decoding of raw test vectors with local AI analysis modules, the method effectively solves the register configuration problem in complex ATE testing, achieving significant improvements in both efficiency and accuracy.
摘要 (Chinese)
主题:基于 SMT8 协议解析与本地 AI 分析的 ATE 寄存器配置自动验证与优化方法
随着先进集成电路设计复杂度的不断提升,芯片测试也变得日益复杂。超过90%的测试项目要求在执行测量前,通过指定的协议集使系统进入预定义的工作模式。这一过程通常通过 I2C、JTAG 或 SPI 等芯片协议对寄存器进行配置来实现。在复杂的测试场景中,单个 ATE 测试程序可能包含大量寄存器初始化和动态配置操作。此外,寄存器配置过程与后续的测量操作往往交错进行,测试结果的准确性取决于目标寄存器状态配置完成后的精确时序窗口。
这会出现如下这些挑战:
- 寄存器配置正确性验证主要依赖于程序开发和调试期间的手动检查。
- 工程师必须在大量寄存器序列配置中,筛选出需要插入测量操作的指定时间节点。
- 寄存器配置的修改和验证通常依赖于大量手动工作。
为解决这些问题,提出了基于 SMT8 协议解析与本地 AI 分析的 ATE 寄存器配置自动验证与优化方法。本文结构如下:第1章详细概述了 ATE 测试的背景及现状,第2章描述了该方法的核心功能,包括对 DFT 原始测试向量进行协议级解码,自动提取寄存器地址映射、配置数据和执行周期信息。除此之外,还引入了一个基于本地 AI 的数据分析模块,用于分析 Test Plan 内容,最后将原始测试向量解析出的寄存器配置与 AI 从 Test Plan 提取的寄存器配置规范进行比对,并生成结果报告。
该框架重点解决了以下关键技术挑战:
- 原始测试向量中波形信息的抽象化。
- 通用的协议兼容性。
- 寄存器配置段时钟周期的精确定位。
- 本地 AI 模型预设的调优及验证。
实验结果表明,该方法显著提高了基于 ATE 的芯片测试工作流中寄存器配置的可读性和调试效率。与传统的手动分析方法相比:
- 用于寄存器配置一致性验证的时间从每个项目 18 小时减少到每个项目 2 小时(节省近 88%)。
- 调试过程中用于修改寄存器配置的时间从每个项目 10 小时减少到 4 小时(时间成本降低 60%)。
- 测试程序的整体开发和调试周期平均缩短了约 30%。
- 程序错误率降低了 70%。
通过将原始测试向量的协议级自动解码与本地 AI 分析模块相结合,该方法有效解决了复杂 ATE 测试中的寄存器配置问题,在效率和准确性方面均实现了显著提升。
“一种抑制高速 PCB 玻纤效应的差分通道 skew 补偿与谐振消除方法”
Abstract - Biography (English)
Fiber weave effect (FWE) on PCBs induces PN skew within differential pairs, which triggers severe insertion loss resonance in high-speed applications such as 112Gbps PAM4 systems. This paper verifies that PN skew acts as the root cause and proposes an innovative compensation scheme.
By coating high-dielectric-constant (high-Dk) solder mask on the faster transmission line, the propagation delays of differential traces are well balanced. Experimental results demonstrate that the proposed method eliminates resonance and reduces PN skew from -36 ps to below 10 ps.
This technique provides a simple and low-cost solution for skew mitigation.
With 14 years of SIPI simulation experience, I have conducted SIPI simulations for mobile phone SoC chips, CPU chips, ADCs and DACs, as well as simulations of 800G and 1.6T optical modules. Currently, I am engaged in SIPI simulation of FT boards at Pi Semiconductor.
摘要 - 简介 (Chinese)
PCB 上的玻纤效应(FWE)会在差分对中引起 PN 时延差(PN Skew),从而在 112Gbps PAM4 等高速场景下导致严重的插损谐振。本文确定了 PN 时延差是根本原因,并提出了一种新颖的补偿方法。
通过在速度较快的传输线上涂覆高介电常数的绿油,我们有效地平衡了传输时延。实验结果表明,该方法能消除谐振,并将 PN 时延差 从 -36 皮秒 降低至 10 皮秒以下。
这是一种简单、低成本降低延时差的解决方案。
14年SIPI仿真经验,先后从事手机SOC芯片、CPU芯片、ADC、DAC芯片的SIPI仿真、800G/1.6T光模块仿真。目前在圆周率半导体从事FT板的SIPI仿真工作。
“面向高分辨率显示驱动芯片的 V93000 高并行高效率测试方案”
Abstract - Biography (English)
With the growth of the demand for entertainment, high resolution and high refresh rate displayers become increasingly popular. These products are always featured with display resolution up to 4k and refresh rates up to 300Hz, which means they need a high bandwidth and high-speed process unit. Normally, Display Driver Chip is equipped with high performance analog modules, variety of display interface modules and complex digital processing modules. To test this chip, there are several special notices list below:
- Cost sensitive both on hardware solution and software test time
- High performance demand on analog tests both at high Frequency (up to 75Mhz) and high resolution (up to 24 bits), it is a great challenge for tester and data processing
- To meet high parallelism and high-performance testing requirements, strict LB design to ensure high-quality SI and PI is essential.
- Complex circuit designed involve multi-site data Consistency problem
In this paper, we delivered a high efficiency test solution based on a real case. This test solution included hardware LB design and software test program develop algorithm. It includes 4 chapters for description:
- Generally, introduce the test DUT background (like spec target, IP module, test requirement). Then recommend an optimized 16 sites hardware solution with high parallelism. List the key point of how to control test time, TTR suggestions based on the real case.
- Completely test process introduction of analog module. Including 75Mhz with 14 bits ADC test and 1KHz 24bits DAC test. To prove WSMX AWG performance can meet the spec of the target DUT, we collect real experiment data which include 10MHz to 100MHz dynamic performance of sine wave with WSMX HS unit. And a special calculation algorithm will be shown in this part, which can obviously improve test performance of dynamic parameters like SNR/SNDR/THD/SFDR even test with non-coherence sample (SNR can improve over 30dB in some extremely condition).
- LB design special notice, detail descript signal routing rules while testing. A holey signal path placement suggestion based on real case will be added here (In some extremely condition, THD will have 20dB gap).
- Demonstrate the root causes of multi-site inconsistency problems across analog test items and provide effective optimization solutions. (yield can improve obviously)
In addition, the target device is already in mass production, analog test performance meets the goal. So, the reference test result will be also past at the end.
Chelsea Zhou
Develop Application Engineer of ADVANTEST. Obtained a bachelor’s degree in electronic information systems in 2022. With more than 4 years of experience in developing ATE test programs. Engaged in digital, high-speed and mixed-signal chip testing, providing ATE chip test software and hardware solutions for leading semiconductor corporations in the Chinese mainland.
摘要 - 简介 (Chinese)
随着娱乐应用需求的持续增长,高分辨率、高刷新率显示产品日益普及。当前显示器产品分辨率可达 4K,刷新率可超过 300Hz,对芯片带宽和高速数据处理能力提出了更高要求。显示驱动芯片(Display Driver Chip)通常集成高性能模拟模块、多种显示接口模块以及复杂数字处理模块,因此其测试面临诸多挑战,包括硬件成本与测试时间控制、高频高精度模拟性能验证、高并行测试下的信号完整性(SI)与电源完整性(PI)设计,以及多站点测试一致性等问题。
本文基于实际量产项目,提出了一套针对显示驱动芯片的高效率测试解决方案,涵盖硬件 Load Board 设计与软件测试程序开发两大部分。首先介绍被测器件(DUT)的产品背景、性能指标、IP 模块特性及测试需求,并结合实际案例提出优化的 16 Site 高并行硬件方案,以及降低测试时间(Test Time Reduction, TTR)的关键策略。
其次,详细介绍模拟模块测试流程,包括 75 MHz、14 位 ADC 测试以及 1 kHz、24 位 DAC 测试。通过实际实验数据验证 WSMX 高速 AWG 平台在 10 MHz 至 100 MHz 范围内的动态性能,并提出一种改进算法,在非相干采样条件下仍可显著提升 SNR、SNDR、THD 及 SFDR 等动态参数的测试精度,极端条件下 SNR 提升可超过 30 dB。
此外,论文还总结了模拟测试中 Load Board 设计和信号布线的关键注意事项,并结合实际案例给出优化建议。在某些极端条件下,合理的信号路径设计可使 THD 性能改善超过 20 dB。同时,针对多 Site 测试中的数据一致性问题,深入分析其根本原因,并提出有效优化方案,从而显著提升量产测试良率。最终,基于已经量产的目标产品验证了该方案的有效性,测试结果表明模拟性能满足设计目标要求。
周淑婷
现任 Advantest 应用开发工程师(Application Engineer),于2022年获得电子信息系统专业学士学位。拥有4年以上ATE测试程序开发经验,专注于数字、高速接口及混合信号芯片测试。为中国大陆领先的半导体企业提供ATE测试软件和硬件解决方案,具备丰富的量产测试开发与技术支持经验。
15:30
Poster & EXPO
Enjoy time to walk the EXPO floor and network while refreshments are served. Take some time to see our posters as you enjoy refreshments.“你并不孤单:探针烧毁的痛点与博弈”
Abstract - Biography (English)
Abstract:
This study aims to analyze and investigate the causes of probe burn during wafer testing of high-current, high-power devices. We employ an integrated approach combining:
- Monte Carlo simulations of random resistor network distributions,
- Multiphysics finite element simulations coupling joule heating with thermal diffusion to model temperature rise,
- AI-driven fitting/optimization using TensorFlow with CUDA acceleration, to predict the temperature rise according to different pin count group and individual probe current distribution.
- Molecular dynamics (MD) simulations to characterize tensile strength properties under different temperature.
By synthesizing insights from these methodologies, we explore the underlying mechanisms of probe burn formation. Our analysis specifically examines whether the identified thermo-electro-mechanical phenomena represent the primary cause or constitute one contributing factor among others……
YJ Shi is a senior expert in semiconductor testing and precision metallic interconnect technologies, with more than two decades of experience in SoC testing, spring probes (Pogo Pins), and MEMS probe and probe card research and development.
He began his career at AMD as a packaging process engineer and SoC test development engineer, and subsequently served as Probe Assembly Manager at Antares, Probe Card R&D Manager at Microprobe Technology, Probe Card R&D Manager for FormFactor China, R&D Director at Twinsolution, and General Manager of Nanofab Semiconductor Technology.
His expertise centers on the development of highly reliable, high-frequency, and miniaturized metallic interconnect structures. His core capabilities include Pogo Pin and MEMS probe structural design, materials engineering, mems process budgeting, micro-assembly, reliability and electrical performance validation, and production ramp-up.
He has comprehensive experience spanning technology roadmap planning, product definition, R&D organization building, mems process development, customer qualification, and production stabilize, with a particular strength in translating advanced probe technologies into robust, scalable, and manufacturable solutions.
摘要 - 简介 (Chinese)
摘要:
本研究旨在分析和探究高电流、高功率器件在晶圆测试过程中发生探针烧毁的原因。我们采用综合性研究方法,结合以下几种分析与仿真手段:
- 基于随机电阻网络分布的蒙特卡洛(Monte Carlo)模拟;
- 多物理场有限元仿真,将焦耳热与热扩散过程进行耦合,以模拟温升变化;
- 基于人工智能的拟合与优化方法,利用 TensorFlow 和 CUDA 加速,根据不同探针数量分组及单个探针的电流分布,预测探针温升;
- 分子动力学(Molecular Dynamics,MD)仿真,用于表征不同温度条件下材料的抗拉强度特性。
通过综合分析上述方法获得的结果和分析,本研究进一步探讨探针烧毁形成的内在机制。我们重点分析所识别出的热-电-力耦合现象判断其究竟是导致探针烧毁的主要原因,还是众多影响因素中的一个……
施元军是集成电路测试与精密金属互联领域资深专家,拥有二十余年 SoC 测试、弹簧探针(Pogo Pin)及 MEMS 探针/探针卡研发与产业化经验。
职业生涯始于 AMD,历任封装工艺工程师和 SoC 测试开发工程师;随后先后担任安托锐探针组装经理、美博科技探针卡研发经理、FormFactor 中国区探针卡研发经理、韬盛研发总监及晶晟微纳半导体科技公司总经理。
其长期专注于高可靠、高频及微型化金属互联结构研发,核心专长涵盖 Pogo Pin 与 MEMS 探针的结构设计、材料体系、精密制造、微细组装、可靠性与电气性能验证,以及量产导入。
施元军具备从技术路线规划、产品定义和研发组织建设,到工艺开发、客户验证的完整经验,尤其擅长将探针及探针卡技术转化为稳定、可量产的产品解决方案。
“GPAC130: 一种应用于芯片测试探针的高性价比钯合金材料”
Abstract - Biography (English)
As semiconductor devices continue to evolve toward greater complexity, higher integration, and smaller geometries, palladium alloy materials are increasingly adopted in semiconductor test probes due to their favorable mechanical and electrical properties. However, conventional palladium alloys commonly used in the market typically exhibit a hardness of approximately 460 HV after heat treatment and an electrical resistivity of 13–14 μΩ·cm. These limitations result in relatively poor wear resistance, shorter service life, and higher electrical resistance, making them less suitable for advanced semiconductor testing applications that require high probe density, long testing cycles, and enhanced reliability. In addition, many high-performance palladium alloys rely on elevated proportions of precious metals to achieve superior properties, leading to significantly increased manufacturing costs. This challenge becomes particularly pronounced in complex semiconductor test modules containing a large number of high-density probes, where balancing performance and cost-effectiveness remains difficult.
To address these industry challenges, the GOLDLINK R&D Center initiated a dedicated development program and successfully developed GPAC130, a novel high-performance palladium alloy specifically designed for semiconductor test probe applications. By maintaining the palladium content at 40 wt.% while optimizing the alloy composition and refining the manufacturing process, GPAC130 achieves a significant enhancement in overall electromechanical performance.
The alloy exhibits a hardness of 510–540 HV and an electrical resistivity of 10.5–11.5 μΩ·cm, while retaining excellent machinability suitable for the fabrication of precision spring probes. Compared with conventional high-performance palladium alloys, GPAC130 achieves significantly improved hardness and reduced electrical resistivity while maintaining the same palladium content.
The alloy offers a favorable balance between performance and cost, making it a promising material for advanced semiconductor test probe applications. Its combination of high hardness, low resistivity, and good machinability can effectively support the increasing demands of modern semiconductor testing, including high reliability, extended test duration, and high-density probe configurations.
Daying Cao
As the Chief Data Scientist of the R&D Center at Zhejiang Goldlink Tech Co.,Ltd, he brings more than ten years of experience in artificial intelligence and big data. His research and engineering expertise focuses on data analytics, machine learning, and large language models (LLMs) application across finance, technology, and advanced manufacturing.
He has led multiple AI-driven innovation projects within the company, applying interdisciplinary knowledge to enhance intelligent manufacturing and accelerate product development. He received his M.A. in Statistics from Columbia University and holds dual bachelor’s degrees in Applied Mathematics and Computer Science.
摘要 - 简介 (Chinese)
随着半导体芯片不断向复杂化、小型化发展,钯合金材料凭借其优异的机械性能和电气性能,正越来越广泛地应用于半导体测试探针制造。然而,目前市场上常用的钯合金材料硬度通常约为460 HV,电阻率为13–14 μΩ·cm,存在耐磨性相对较差、使用寿命较短以及电阻率较高等不足,因此难以满足先进半导体测试对高密度、长测试周期及高可靠性的需求。此外,为获得更优异的性能,许多高性能钯合金普遍采用较高比例的贵金属配比,导致制造成本显著增加。特别是在包含高密度探针的复杂半导体测试模块中,如何兼顾材料性能与成本效益已成为行业面临的问题。
针对上述行业痛点,GOLDLINK研发中心开展专项技术研发,成功开发出一款专用于半导体测试探针的新型高性能钯合金材料GPAC130。该材料在保持钯含量40 wt.%不变的基础上,通过优化合金成分设计和改进生产制造工艺,实现了机械性能与电气性能的提升。
GPAC130具有510–540 HV的硬度和10.5–11.5 μΩ·cm的电阻率,同时保持了优异的切削加工性能,可满足精密弹簧探针的制造加工需求。与传统高性能钯合金相比,GPAC130在保持相同钯含量的前提下,实现了更高的硬度和更低的电阻率,在材料性能与成本之间取得了良好的平衡,为先进半导体测试探针提供了一种具有应用前景的新型材料解决方案。
曹大瀛
现任浙江金连接科技股份有限公司研发中心首席数据科学家,深耕人工智能与大数据领域十余年,聚焦数据分析,机器学习算法、大模型应用落地,覆盖金融、互联网、高端制造等多行业;牵头推动公司多项AI相关技术项目落地,依托交叉学科优势,以数据智能赋能公司生产与产品研发。
哥伦比亚大学统计学硕士,拥有应用数学、计算机科学本科学位。
“高功率老化测试插座(Vulcan)”
Abstract - Biography (English)
With the development of AI and automated driving technology, semiconductor chips are evolving toward higher power, larger package sizes, and higher pin counts. Traditional burn-in socket designs cannot handle the high temperatures and insertion forces required for these demanding applications. Typically, tooled injection-molded burn-in sockets and simple clamshell lids are used; however, conventional mold materials and standard lid actuation mechanisms cannot support the power and force needed to properly compress the spring probes or withstand the rigorous burn-in and stress-testing process.
In this paper, we present a solution that addresses these thermal and large-device challenges by introducing our new purpose-built, high-power burn-in socket solution, Vulcan. The new Vulcan product line leverages our H-Pin probe technology, high-performance socket materials, and our patent-pending Shuttle Bar Lid Force Delivery System to overcome the force, thermal, and power barriers associated with next-generation semiconductor devices.
This paper describes the new socket concept in detail and presents simulation results, validation testing, and real-world performance data demonstrating that the Vulcan platform provides superior electrical, mechanical, and thermal performance to maximize device reliability and yield.
Joe Huang
Joe Huang is a Mechanical Engineer at Smiths Interconnect, a Molex company. He graduated from Yangzhou University in 2019 with a degree in Mechanical Design, Manufacturing and Automation. He joined Smiths Interconnect, a Molex company, in 2022 and currently works as a Mechanical Engineer and Thermal Design Engineer responsible for semiconductor test product design.
摘要 - 简介 (Chinese)
随着人工智能和自动驾驶技术的发展,芯片正朝着更高功率、更大尺寸和更高引脚数的方向演进,传统的老化测试插座设计已无法应对这些极端工况所需的高温和高作用力。通常,此类应用会使用模具注塑成型的老化测试插座和简单的翻盖式测试压盖。然而,传统的模具材料和标准的测试盖驱动机构无法支持测试所需的高功率,难以克服测试插座的压紧力以将弹簧探针压缩到特定行程,也难以承受严苛的应力测试阶段。
在本文中,我们将通过介绍我们全新推出的、专为高功率项目而设计的老化测试插座解决方案“Vulcan”,来阐述如何应对散热和大尺寸芯片带来的挑战。我们全新的 Vulcan 产品线利用了我们专有的 H 探针技术和高性能测试插座材料,以及我们正在申请的新专利“滑梭杆测试压盖力传导系统”,从而克服了压紧力、散热和功率方面的障碍。本文将详细描述我们的新概念,并展示仿真、验证和实际数据,以证明该产品能够提供卓越的电气、机械和热性能,从而实现最高测试良率。
黄文杰
黄文杰
机械工程师,Smiths Interconnect a Molex company
黄文杰,2019年毕业于扬州大学,所学专业是机械设计制造及自动化。自2022年起,黄文杰就职于史密斯英特康莫仕公司,目前任职机械工程师与热设计工程师,负责半导体测试产品设计。
16:30
“诊断模拟引脚电子器件中由SOA引起的老化漂移:对AI与HPC测试的启示”
Abstract - Biography (English)
Silent Data Corruption (SDC) and post-deployment hardware faults have emerged as significant reliability concerns for hyperscale AI and HPC infrastructure, with recent industry reports from Google, Meta, and the Open Compute Project (OCP) highlighting defects that pass manufacturing test but only manifest under specific bias conditions or after extended operation. The published case studies are predominantly digital. In this study, we examine the same failure class in an analog Automated Test Equipment (ATE) pin electronics ASIC, devices that perform final test on AI and HPC silicon.
A customer reported progressive VCOM threshold drift on a 256-channel application, affecting approximately 50% of channels and continuing past -900 mV with no observable stabilization. All affected devices had passed final test before production. Failing devices were inspected, and results from initial visual inspection, ATE re-test, and emission microscopy were inconclusive. Bench characterization across 50 devices spanning multiple lots and date codes confirmed that the drift was reproducible and exhibited strong dependence on register configuration and operating temperature but evaded standard production screening due to its time-dependent nature.
Failure analysis techniques such as Focused Ion Beam (FIB) produced misleading initial results. Severing a capacitor and diode in the comparator path arrested the drift, which initially appeared to identify the offending components. A subsequent control FIB cutting non-functional metal also halted the drift, demonstrating that the FIB process itself was perturbing the measurement rather than the targeted devices. This sensitivity to invasive characterization is a notable hazard for this defect class and constrains the design of subsequent debug experiments.
Root cause was traced to Safe Operating Area (SOA) violations within the analog comparator. Floating-node conditions in one register state and an over-stressed gain-stage VGS in another subjected gate oxides to chronic overstress, accelerating Hot Carrier Injection (HCI) and Bias Temperature Instability (BTI). Pre-silicon simulation did not flag the floating-node case due to the initial conditions the simulator applies, preventing the very condition responsible. Final test could not screen for the effect because the resulting offset is sub-microvolt at t = 0 and accumulates only after days of biased operation.
This case study underscores the importance of integrating aging-aware design verification with adaptive test strategies for analog devices intended for long-deployment applications. The presentation walks through the diagnostic flow, the validated workaround shipped to the customer during silicon respin development, and the design corrections incorporated in successor revisions. We conclude with recommendations for screening long-latency, bias-dependent drift in the analog devices on which AI and HPC test programs increasingly depend, including SOA analysis during pre-silicon verification, extended-stress characterization protocols, and closer coordination between design verification and production test engineering teams.
Hailin is an Applications Engineer at ElevATE Semiconductor with a strong engineering background and a passion for innovation. He holds a degree from the University of Toronto, where he also engaged in academic research collaborations, and has professional experience spanning software development and mixed-signal engineering.
Dedicated to tackling complex technical challenges and fostering opportunities for students, Hailin is committed to advancing the field of semiconductor test while inspiring the next generation of professionals. He is currently pursuing a master’s degree at UC Berkeley, focusing on applying statistical models and data science principles to enhance test engineering.
摘要 - 简介 (Chinese)
静默数据损坏(SDC)与部署后硬件故障已成为超大规模AI与HPC基础设施可靠性的重要议题,Google、Meta及开放计算项目(OCP)近期报告均指出,部分缺陷器件可通过出厂测试,却仅在特定偏置条件或长期运行后才会显现。已发表案例以数字器件为主,本研究则针对同类故障机制在模拟自动测试设备(ATE)引脚电子专用集成电路(ASIC)中的表现进行分析。
某客户报告在一款256通道应用中出现渐进性VCOM阈值漂移,约50%通道受影响,且无收敛迹象,所有器件均已通过出厂测试。初步目视检查、ATE复测及发射显微镜检测均无法定位问题。跨批次台架表征证实该漂移可重复,且与寄存器配置及工作温度密切相关,因其时间依赖特性而未被标准量产筛选捕获。
聚焦离子束(FIB)分析初期给出误导性结果:切断比较器路径中的特定元件后漂移即停止,但后续对照实验显示,切割无功能金属走线同样能中止漂移,证明是FIB加工过程本身干扰了测量。这一现象揭示了该类缺陷对侵入式表征手段的敏感性,也限制了后续调试实验的设计。
根本原因被追溯至模拟比较器内部的安全工作区(SOA)违规:特定寄存器状态下的悬空节点及增益级过应力,使栅氧化层长期承受过应力,加速了热载流子注入(HCI)与偏置温度不稳定性(BTI)效应。由于仿真初始条件规避了悬空节点状态,前硅仿真未能捕捉该问题;而由此产生的偏移在t=0时仅为亚微伏级,须经数日偏置运行方逐渐显现,因而也无法被最终测试筛出。
本案例研究表明,针对长期部署应用的模拟器件,需将老化感知设计验证与自适应测试策略相结合。报告将介绍诊断流程、提供给客户的验证性临时方案,以及后续版本中的设计改进,并就前硅SOA分析、扩展应力表征及设计验证与量产测试团队协作提出建议,以筛查AI与HPC测试所依赖的模拟器件中长潜伏期、偏置依赖性漂移问题。
Hailin 是 ElevATE Semiconductor 的应用工程师,具备扎实的工程背景并对创新充满热情。他毕业于多伦多大学,并参与了多项学术研究合作,职业经历涵盖软件开发与混合信号工程。
Hailin 致力于解决复杂的技术挑战并为学生创造机会,专注于推动半导体测试领域的发展,同时激励下一代工程专业人才。他目前正在加州大学伯克利分校攻读硕士学位,研究重点是运用统计模型和数据科学原理提升测试工程水平。
17:45
Lucky Draw
Door prizes for randomly selected attendees
(Must be present to win / void where prohibited)